PART |
Description |
Maker |
IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范,以.1A的,80V00V.30.40 Ohm的N通道功率MOSFET
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HARRIS[Harris Corporation] Harris Semiconductor Harris, Corp.
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FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
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IXYS[IXYS Corporation]
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HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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FAIRCHILD[Fairchild Semiconductor] Samsung semiconductor Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS[IXYS Corporation]
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IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs Single Die MOSFET
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IXYS Corporation
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IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IXFT66N20Q IXFH66N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
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IXYS[IXYS Corporation] IXYS, Corp.
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation]
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RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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